Product Details
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20V 5.3A Single N-Channel Power MOSFET
Product Parameters
Continuous Drain Current (ID)
5.3 A
Drain to Source Voltage (Vdss)
20 V
Gate to Source Voltage (Vgs)
870 mV
Lifecycle Status
Production (Last Updated: 3 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 3 years ago)
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2 W
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
25.4 V
Min Operating Temperature
-55 °C
Peak Pulse Current
21.4 A
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
