Product Details
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-20V -4.7A Single P-Channel Power MOSFET
Product Parameters
Continuous Drain Current (ID)
-4.7 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
39 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
-700 mV
Input Capacitance
1.02 nF
Lifecycle Status
NRND (Last Updated: 3 years ago)
Manufacturer Lifecycle Status
NRND (Last Updated: 3 years ago)
Max Breakdown Voltage
9.8 V
Max Forward Surge Current (Ifsm)
2.5 A
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.25 W
Max Repetitive Reverse Voltage (Vrrm)
250 V
Max Reverse Leakage Current
1 µA
Min Breakdown Voltage
25.4 V
Min Operating Temperature
-55 °C
Peak Pulse Current
21.4 A
Reverse Recovery Time
50 ns
Reverse Standoff Voltage
24 V
Threshold Voltage
-400 mV
Turn-Off Delay Time
71 ns
