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HomeAll CategoriesDiscrete SemiconductorsTransistorsIGBTsSTGE50NC60VD
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STMicroelectronics

STGE50NC60VD

$ 17.851

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Trans IGBT Chip N-CH 600V 80A 4-Pin ISOTOP Tube

Price and Availability
Product Parameters
Collector Emitter Breakdown Voltage
600 V
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
600 V
Element Configuration
Single
Height
12.2 mm
Input
Standard
Input Capacitance
4.55 nF
Lead Free
Lead Free
Length
38.2 mm
Max Breakdown Voltage
600 V
Max Collector Current
80 A
Max Operating Temperature
150 °C
Max Power Dissipation
260 W
Min Operating Temperature
-55 °C
Mount
Chassis Mount, Screw, Surface Mount
NTC Thermistor
No
Number of Pins
4
Power Dissipation
260 W
Radiation Hardening
No
REACH SVHC
No SVHC
Rise Time
17 ns
RoHS
Compliant
Turn-Off Delay Time
140 ns
Turn-On Delay Time
43 ns
Width
24.15 mm
Descriptions

Descriptions of STMicroelectronics STGE50NC60VD provided by its distributors.

Igbt Single Transistor, 90 A, 2.5 V, 260 W, 600 V, Isotop, 4 Rohs Compliant: Yes |Stmicroelectronics STGE50NC60VD

Newark

IGBT, N 600V 50A ISOTOP; DC Collector Current: 90A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 260W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: ISOTOP; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 50A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 260W; Pulsed Current Icm: 200A; Rise Time: 17ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

Farnell

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel

ComSIT Distribution GmbH

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