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Power Igbt Transistor
Descriptions of Semikron SKM900GA12E4 provided by its distributors.
Igbt, Module, 1.2Kv, 1.305Ka; Continuous Collector Current:1.305Ka; Collector Emitter Saturation Voltage:1.83V; Power Dissipation:-; Operating Temperature Max:175°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Semikron SKM900GA12E4
Newark
POWER IGBT TRANSISTOR
Richardson RFPD