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Product Details

Vishay Siliconix

SI3981DV-T1-GE3

Datasheet

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Trans Mosfet P-ch 20V 1.6A 6-PIN TSOP T/r

Price and Availability
Product Parameters
Case/Package
TSOP
Continuous Drain Current (ID)
1.6 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
185 mΩ
Drain to Source Voltage (Vdss)
-20 V
Element Configuration
Dual
Fall Time
21 ns
Gate to Source Voltage (Vgs)
8 V
Max Operating Temperature
150 °C
Max Power Dissipation
800 mW
Min Operating Temperature
-55 °C
Mount
Surface Mount
Nominal Vgs
-1.1 V
Number of Elements
2
Number of Pins
6
Power Dissipation
800 mW
Radiation Hardening
No
Rds On Max
185 mΩ
REACH SVHC
Unknown
Rise Time
50 ns
RoHS
Compliant
Threshold Voltage
-1.1 V
Turn-Off Delay Time
45 ns
Turn-On Delay Time
30 ns
Product Alias

This part may be known by these alternate part numbers:

SI3981DVT1GE3
Descriptions

Descriptions of Vishay Siliconix SI3981DV-T1-GE3 provided by its distributors.

Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

ComSIT Distribution GmbH

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