Electronic Parts

Product Details

Sharp

PT480E00000F

$ 0.174

Datasheet

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Phototransistor IR Chip Silicon 800nm 2-Pin / Phototransistor

Price and Availability
Product Parameters
Case/Package
Radial
Collector Emitter Breakdown Voltage
35 V
Collector Emitter Voltage (VCEO)
6 V
Dark Current
100 µA
Fall Time
3.5 µs
Lead Free
Lead Free
Lead Length
17.5 mm
Lens Color
Clear
Lens Style
Domed
Max Collector Current
20 mA
Max Operating Temperature
85 °C
Max Power Dissipation
75 mW
Min Operating Temperature
-25 °C
Mount
Through Hole
Number of Elements
1
Number of Pins
2
Orientation
Side View
Output Current
20 mA
Peak Wavelength
800 nm
Polarity
NPN
Power Consumption
75 mW
Power Dissipation
75 mW
Radiation Hardening
No
REACH SVHC
Unknown
Rise Time
3 µs
RoHS
Compliant
Viewing Angle
70 °
Wavelength
800 nm
Width
3 mm
Descriptions

Descriptions of Sharp PT480E00000F provided by its distributors.

PHOTOTRANSISTOR, SIDE VIEW; Transistor Type:Phototransistor; Half Angle:13°; Wavelength, Spectral Response Peak:800nm; Case Style:Radial; Nom Sensitivity @ mW/cm2:1.7mA@1mW/cm2; Current, Ic Typ:1.7mA; Rise Time:3µs; Operating ;RoHS Compliant: Yes

Newark

PHOTOTRANSISTOR, SIDE VIEW; Wavelength Typ: 800nm; Viewing Angle: -; Power Consumption: 75mW; No. of Pins: 2Pins; Transistor Case Style: Side Looking; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Angle of Half Sensitivity ±: 13°; Collector Emitter Saturation Voltage Vce(on): 0.4V; Continuous Collector Current Ic Max: 6mA; Current Ic Typ: 1.7mA; Dark Current: 100nA; External Depth: 2.8mm; External Length / Height: 4mm; External Width: 3mm; Fall Time tf: 3.5µs; Lead Diameter: 0.4mm; Lead Length: 17.5mm; Lead Spacing: 2.54mm; Nom Sensitivity @ mW/cm²: 1.7mA @ 1mW/cm²; Operating Temperature Max: 85°C; Operating Temperature Min: -25°C; Operating Temperature Range: -25°C to +85°C; Peak Spectral Response Wavelength: 800nm; Peak Wavelength: 800nm; Reverse Protection Voltage: 6V; Rise Time: 3µs; Storage Temperature Max: 85°C; Storage Temperature Min: -40°C; Transistor Polarity: NPN; Transistor Type: Photo

Farnell

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