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ON Semi NJW21193G PNP Bipolar Transistor, 16 A, 250 V, 3-Pin TO-3P | ON Semiconductor NJW21193G
Price and Availability
Product Parameters
Case/Package
TO-220-3
Collector Base Voltage (VCBO)
400 V
Collector Emitter Breakdown Voltage
350 V
Collector Emitter Saturation Voltage
4 V
Collector Emitter Voltage (VCEO)
250 V
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Frequency
4 MHz
Gain Bandwidth Product
4 MHz
Height
20.1 mm
hFE Min
20
Lead Free
Lead Free
Length
15.8 mm
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Max Breakdown Voltage
250 V
Max Collector Current
16 A
Max Frequency
4 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
200 W
Min Operating Temperature
-65 °C
Number of Elements
1
Number of Pins
3
Polarity
PNP
Power Dissipation
200 mW
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
Schedule B
8541210080
Transition Frequency
4 MHz
Width
5 mm
Descriptions
Descriptions of onsemi NJW21193G provided by its distributors.
NJW Series 250 V 16 A Flange Mount PNP Silicon Power Transistor - TO-3P
Future Electronics
The NJW21193 and NJW21194 utilize Perforated Emitter technology and are specifically designed for high power audio output disk head positioners and linear applications.
