Product Details
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RF Power Transistor, 0.01 to 0.11 GHz, 1400 W, 29 dB, 50 V, LDMOS, SOT-539A
Product Parameters
Continuous Drain Current (ID)
16 A
Drain to Source Breakdown Voltage
125 V
Drain to Source Voltage (Vdss)
125 V
Element Configuration
Single
Gate to Source Voltage (Vgs)
40 V
Max Operating Temperature
150 °C
Max Power Dissipation
300 W
Min Operating Temperature
-65 °C
