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HomeAll CategoriesDiscrete SemiconductorsTransistorsBJTsMJD6039T4G
Product Details

onsemi

MJD6039T4G

$ 0.311

Datasheet

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Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Price and Availability
Product Parameters
Case/Package
DPAK
Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
80 V
Collector Emitter Saturation Voltage
2.5 V
Collector Emitter Voltage (VCEO)
80 V
Contact Plating
Tin
Continuous Collector Current
4 A
Current Rating
4 A
Element Configuration
Single
Emitter Base Voltage (VEBO)
5 V
Halogen Free
Halogen Free
Lead Free
Lead Free
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Max Breakdown Voltage
80 V
Max Collector Current
4 A
Max Operating Temperature
150 °C
Max Power Dissipation
1.75 W
Min Operating Temperature
-65 °C
Number of Elements
1
Number of Pins
3
Packaging
Cut Tape (CT)
Polarity
NPN
Power Dissipation
20 W
Radiation Hardening
No
RoHS
Compliant
Schedule B
8541290080
Voltage Rating (DC)
80 V
Product Alias

This part may be known by these alternate part numbers:

MJD6039T4G.
Descriptions

Descriptions of onsemi MJD6039T4G provided by its distributors.

MJD Series 80 V 4 A NPN Darlington Power Transistor TO-252-3

Future Electronics

MJD Series 80 V 4 A NPN Darlington Power Transistor TO-252-3

Future Electronics

DARLINGTON TRANSISTOR, NPN, 80V, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 4A; DC Current Gain hFE: 1000hFE; Transis

Farnell

DARLINGTON TRANSISTOR, NPN, 80V, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: 4A; DC Current Gain hFE: 1000hFE; Transis

Farnell

Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators convertors and power amplifiers.

North Star Micro

Power Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin

Decca Corp

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