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HomeAll CategoriesDiscrete SemiconductorsTransistorsIXTA52P10P
Product Details

IXYS

IXTA52P10P

$ 1.889

Datasheet

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Trans MOSFET P-CH 100V 52A 3-Pin(2+Tab) D2PAK

Price and Availability
Product Parameters
Case/Package
TO-263
Continuous Drain Current (ID)
52 A
Drain to Source Breakdown Voltage
-100 V
Drain to Source Resistance
50 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
22 ns
Gate to Source Voltage (Vgs)
20 V
Input Capacitance
2.845 nF
Lead Free
Lead Free
Max Operating Temperature
150 °C
Max Power Dissipation
300 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Power Dissipation
300 W
Rds On Max
50 mΩ
Rise Time
29 ns
RoHS
Compliant
Turn-Off Delay Time
38 ns
Descriptions

Descriptions of IXYS IXTA52P10P provided by its distributors.

IXT Series 100 V 50 mOhm 300 W Surface Mount P-channel Power Mosfet - TO-263

Future Electronics

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