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HomeAll CategoriesDiscrete SemiconductorsTransistorsMOSFETsIXFH12N50F
Product Details

IXYS

IXFH12N50F

$ 5.998

Datasheet

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Single N-Channel 500 V 400 mOhm 54 nC 180 W Surface Mount Mosfet - TO-247-3

Price and Availability
Product Parameters
Continuous Drain Current (ID)
12 A
Drain to Source Breakdown Voltage
500 V
Drain to Source Resistance
400 mΩ
Drain to Source Voltage (Vdss)
500 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
20 V
Max Operating Temperature
150 °C
Max Power Dissipation
180 W
Min Operating Temperature
-55 °C
Number of Pins
3
Power Dissipation
180 W
REACH SVHC
No SVHC
Resistance
400 mΩ
Rise Time
14 ns
RoHS
Compliant
Schedule B
8541290080
Turn-Off Delay Time
28 ns
Descriptions

Descriptions of IXYS IXFH12N50F provided by its distributors.

MOSFET, N, RF, TO-247AD; Drain Source Voltage Vds: 500V; Continuous Drain Current Id: 12A; Power Dissipation Pd: 180W; Operating Frequency Min: -; Operating Frequency Max: 500kHz; RF Transistor Case: TO-247AD; No. of Pins: 3Pin

Farnell

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