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HomeAll CategoriesDiscrete SemiconductorsTransistorsMOSFETsIRFR024NTRPBF
Product Details

Infineon

IRFR024NTRPBF

$ 0.320

Datasheet

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Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Price and Availability
Product Parameters
Case/Package
DPAK
Contact Plating
Tin
Continuous Drain Current (ID)
17 A
Current Rating
17 A
Drain to Source Breakdown Voltage
55 V
Drain to Source Resistance
75 mΩ
Drain to Source Voltage (Vdss)
55 V
Dual Supply Voltage
55 V
Element Configuration
Single
Fall Time
27 ns
Gate to Source Voltage (Vgs)
20 V
Height
2.3876 mm
Input Capacitance
370 pF
Lead Free
Contains Lead, Lead Free
Length
6.7056 mm
Lifecycle Status
Obsolete (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
45 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Nominal Vgs
4 V
Number of Channels
1
Number of Elements
1
Number of Pins
3
On-State Resistance
75 mΩ
Package Quantity
2000
Packaging
Tape & Reel
Power Dissipation
38 W
Radiation Hardening
No
Rds On Max
75 mΩ
REACH SVHC
No SVHC
Recovery Time
83 ns
Resistance
75 mΩ
Rise Time
34 ns
RoHS
Compliant
Schedule B
8541290080
Termination
SMD/SMT
Threshold Voltage
4 V
Turn-Off Delay Time
19 ns
Turn-On Delay Time
4.9 ns
Voltage Rating (DC)
55 V
Width
6.22 mm
Product Alias

This part may be known by these alternate part numbers:

IRFR 024 N PBFIRFR 024NPBFIRFR-024NPBFIRFR024NIRFR024N PBFIRFR024NPBFIRFR024NPBF.IRFR024NTRLPBFIRFR024NTRLPBF.IRFR024NTRPBF.IRFR024NTRRPBFSP001552090SP001560558SP001578012
Images

Future Electronics

Future Electronics

Future Electronics

Future Electronics

Future Electronics

RS

RS

RS

TME

Farnell

Farnell

Farnell

Farnell

Farnell

Descriptions

Descriptions of Infineon IRFR024NTRPBF provided by its distributors.

Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

Single N-Channel 55V 0.075 Ohm 20 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

MOSFET, N-CH, 55V, 17A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 17A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 45W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Farnell

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