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HomeAll CategoriesDiscrete SemiconductorsTransistorsMOSFETsIRF135B203
Product Details

Infineon

IRF135B203

$ 1.268

Datasheet

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135V Single N-Channel HEXFET Power MOSFET in a TO-220 package, TO220-3, RoHS

Price and Availability
Product Parameters
Continuous Drain Current (ID)
129 A
Drain to Source Breakdown Voltage
135 V
Drain to Source Resistance
6.7 mΩ
Drain to Source Voltage (Vdss)
135 V
Gate to Source Voltage (Vgs)
20 V
Height
20.56 mm
Input Capacitance
9.7 nF
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
441 W
Min Operating Temperature
-55 °C
Number of Channels
1
Package Quantity
1000
Power Dissipation
441 W
Rds On Max
8.4 mΩ
RoHS
Compliant
Turn-Off Delay Time
114 ns
Turn-On Delay Time
18 ns
Product Alias

This part may be known by these alternate part numbers:

SP001576588
Images

RS

RS

RS

RS

RS

RS

TME

Descriptions

Descriptions of Infineon IRF135B203 provided by its distributors.

Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube

Verical

Trans MOSFET N-CH Si 135V 129A 3-Pin(3+Tab) TO-220AB Tube

Verical

MOSFET, N-CH, 135V, 129A, TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 129A; Drain Source Voltage Vds: 135V; On Resistance Rds(on): 0.0067ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;

Farnell

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