Electronic Parts

Product Details

Infineon

IPD65R1K4C6ATMA1

$ 0.330

Datasheet

RFQ from All Distributors

PoOnHand will send your inquiry to all specialized distributors.

Quantity
Name
Email
Company
Telephone
Country
Select

Transistor: N-MOSFET; unipolar; 650V; 2.8A; 28.4W; PG-TO252-3

Price and Availability
Product Parameters
Case/Package
TO-252-3
Continuous Drain Current (ID)
3.2 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
1.4 Ω
Drain to Source Voltage (Vdss)
650 V
Element Configuration
Single
Fall Time
18.2 ns
Gate to Source Voltage (Vgs)
30 V
Halogen Free
Halogen Free
Input Capacitance
225 pF
Lead Free
Contains Lead
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Dual Supply Voltage
650 V
Max Operating Temperature
150 °C
Max Power Dissipation
28 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Pins
3
On-State Resistance
1.4 Ω
Package Quantity
2500
Packaging
Tape & Reel
Power Dissipation
28 W
Rds On Max
1.4 Ω
Rise Time
5.9 ns
RoHS
Compliant
Schedule B
8541290080
Turn-Off Delay Time
33 ns
Turn-On Delay Time
7.7 ns
Weight
3.949996 g
Product Alias

This part may be known by these alternate part numbers:

Related Parts