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HomeAll CategoriesDiscrete SemiconductorsTransistorsIGB50N65S5ATMA1
Product Details

Infineon

IGB50N65S5ATMA1

$ 2.026

Datasheet

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Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-263AB

Price and Availability
Product Parameters
Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.35 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
80 A
Height
4.5 mm
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-40 °C
Package Quantity
1000
Packaging
Tape & Reel
Power Dissipation
270 W
RoHS
Non-Compliant
Turn-Off Delay Time
139 ns
Turn-On Delay Time
20 ns
Product Alias

This part may be known by these alternate part numbers:

IGB50N65S5SP001502566
Descriptions

Descriptions of Infineon IGB50N65S5ATMA1 provided by its distributors.

Igbt, Single, 650V, 80A, To-263; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:270W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-263; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGB50N65S5ATMA1

Newark

Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-263AB

Decca Corp

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