Product Details
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Power Field-Effect Transistor, 1A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide...
Product Parameters
Continuous Drain Current (ID)
1 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
62 mΩ
Drain to Source Voltage (Vdss)
100 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Min Operating Temperature
-40 °C
