PoOnHand
BOM Tool Log inSign up

Electronic Parts

Products
Manufacturers
Distributors
Articles
HomeAll CategoriesDiscrete SemiconductorsTransistorsMOSFETsBUZ906
Product Details

Semelab

BUZ906

$ 5.470

Datasheet

RFQ from All Distributors

PoOnHand will send your inquiry to all specialized distributors.

Quantity
Name
Email
Company
Telephone
Country
Select

8A I(D) 200V 1-Element P-Channel Silicon Metal-oxide Semiconductor FET TO-3

Price and Availability
Product Parameters
Case/Package
TO-3
Continuous Drain Current (ID)
8 A
Drain to Source Breakdown Voltage
200 V
Drain to Source Resistance
1.5 Ω
Drain to Source Voltage (Vdss)
-200 V
Max Operating Temperature
150 °C
Max Power Dissipation
125 W
Nominal Vgs
-1.5 V
Number of Pins
2
Power Dissipation
125 W
REACH SVHC
No SVHC
RoHS
Compliant
Threshold Voltage
-1.5 V
Product Alias

This part may be known by these alternate part numbers:

1182827BUZ906.
Descriptions

Descriptions of Semelab BUZ906 provided by its distributors.

P Channel Mosfet, -200V, -8A, To-3; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ906

Newark

MOSFET, P, TO-3; Transistor Polarity: P Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 125W; Transistor Case Style: TO-3; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Current Id Max: 8A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Termination Type: Through Hole; Voltage Vds Typ: -200V; Voltage Vgs Max: -1.5V

Farnell

Related Parts