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8A, 200V, N-channel, Si, Power, Mosfet, TO-247
Descriptions of Semelab BUZ901P provided by its distributors.
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 8A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 125W; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Alternate Case Style: SOT-249; Capacitance Ciss Typ: 500pF; Current Id Max: 8A; Current Temperature: 25°C; Diode Flywheel: Id(peak) = 8 A; Full Power Rating Temperature: 25°C; Junction Temperature Tj Max: 150°C; Junction to Case Thermal Resistance A: 1°C/W; No. of Transistors: 1; Pin Configuration: G(1), S(2), D(3); Termination Type: Through Hole; Turn Off Time: 50ns; Turn On Time: 100ns; Voltage Vds Typ: 200V; Voltage Vgs Max: 14V
Farnell