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HomeAll CategoriesDiscrete SemiconductorsTransistorsMOSFETsBUZ900D
Product Details

Semelab

BUZ900D

$ 6.962

Datasheet

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16 A 160 V N-channel Si Power Mosfet TO-3

Price and Availability
Product Parameters
Case/Package
TO-3
Continuous Drain Current (ID)
16 A
Drain to Source Resistance
750 mΩ
Drain to Source Voltage (Vdss)
160 V
Max Operating Temperature
150 °C
Max Power Dissipation
250 W
Nominal Vgs
1.5 V
Number of Pins
2
Power Dissipation
250 W
REACH SVHC
No SVHC
RoHS
Compliant
Threshold Voltage
1.5 V
Descriptions

Descriptions of Semelab BUZ900D provided by its distributors.

Mosfet, N Channel, 160V, 16A, To-3; Channel Type:N Channel; Drain Source Voltage Vds:160V; Continuous Drain Current Id:16A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:-; Gate Source Threshold Voltage Max:1.5V; Msl:- Rohs Compliant: Yes |Tt Electronics/semelab BUZ900D

Newark

MOSFET, N, TO-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 160V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 1.5V; Power Dissipation Pd: 250W; Transistor Case Style: TO-3; No. of Pins: 2Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2019); Current Id Max: 16A; Current Temperature: 25°C; Device Marking: BUZ900D; Full Power Rating Temperature: 25°C; No. of Transistors: 1; Termination Type: Through Hole; Voltage Vds Typ: 160V; Voltage Vgs Max: 14V

Farnell

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