Product Details
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Small Signal Bipolar Transistor, 65V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Product Parameters
Collector Base Voltage (VCBO)
80 V
Collector Emitter Breakdown Voltage
65 V
Collector Emitter Saturation Voltage
300 mV
Collector Emitter Voltage (VCEO)
65 V
Emitter Base Voltage (VEBO)
6 V
Max Collector Current
100 mA
Max Operating Temperature
150 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-65 °C
Transition Frequency
100 MHz
