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HomeAll CategoriesDiscrete SemiconductorsTransistorsBJTs2N5551TA
Product Details

onsemi

2N5551TA

$ 0.048

Datasheet

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Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Price and Availability
Alternate Parts
This Part
Alternate Parts
onsemi
2N5551TA
onsemi
2N5551BU
Mount
Case/Package
Polarity
Collector Emitter Breakdown Voltage
Max Collector Current
Transition Frequency
Collector Emitter Saturation Voltage
hFE Min
Power Dissipation
Through Hole
TO-92
NPN
160 V
600 mA
100 MHz
200 mV
80
625 mW
Through Hole
TO-92
NPN
160 V
600 mA
100 MHz
150 mV
80
625 mW
Product Parameters
Case/Package
TO-92
Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
200 mV
Collector Emitter Voltage (VCEO)
160 V
Contact Plating
Tin
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
100 MHz
Height
5.33 mm
hFE Min
80
Lead Free
Lead Free
Length
5.2 mm
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Max Breakdown Voltage
160 V
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Mount
Through Hole
Number of Elements
1
Number of Pins
3
Polarity
NPN
Power Dissipation
625 mW
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS
Compliant
Schedule B
8541210080
Transition Frequency
100 MHz
Voltage Rating (DC)
160 V
Weight
240 mg
Width
4.19 mm
Product Alias

This part may be known by these alternate part numbers:

2N5551-TA
Descriptions

Descriptions of onsemi 2N5551TA provided by its distributors.

2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92

Future Electronics

2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92

Future Electronics

TRANSISTOR, BIPOL, NPN, 160V, TO-92-3

Newark

TRANSISTOR, BIPOL, NPN, 160V, TO-92-3

Newark

TRANSISTOR, BIPOL, NPN, 160V, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)

Farnell

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Decca Corp

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