PoOnHand
BOM Tool Log inSign up

Electronic Parts

Products
Manufacturers
Distributors
Articles
HomeAll CategoriesDiscrete SemiconductorsTransistorsBJTs2N5551RLRPG
Product Details

onsemi

2N5551RLRPG

$ 0.072

Datasheet

RFQ from All Distributors

PoOnHand will send your inquiry to all specialized distributors.

Quantity
Name
Email
Company
Telephone
Country
Select

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

Price and Availability
Alternate Parts
This Part
Alternate Parts
onsemi
2N5551RLRPG
onsemi
2N5551TA
Mount
Case/Package
Polarity
Collector Emitter Breakdown Voltage
Max Collector Current
Transition Frequency
Collector Emitter Saturation Voltage
hFE Min
Power Dissipation
-
TO-92-3
NPN
160 V
600 mA
300 MHz
250 mV
80
625 mW
Through Hole
TO-92
NPN
160 V
600 mA
100 MHz
200 mV
80
625 mW
Product Parameters
Case/Package
TO-92-3
Collector Base Voltage (VCBO)
180 V
Collector Emitter Breakdown Voltage
160 V
Collector Emitter Saturation Voltage
250 mV
Collector Emitter Voltage (VCEO)
160 V
Current Rating
600 mA
Element Configuration
Single
Emitter Base Voltage (VEBO)
6 V
Frequency
300 MHz
Gain Bandwidth Product
300 MHz
hFE Min
80
Lead Free
Lead Free
Lifecycle Status
Obsolete (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
OBSOLETE (Last Updated: 2 years ago)
Max Collector Current
600 mA
Max Frequency
300 MHz
Max Operating Temperature
150 °C
Max Power Dissipation
625 mW
Min Operating Temperature
-55 °C
Number of Elements
1
Number of Pins
3
Polarity
NPN
Power Dissipation
625 mW
Radiation Hardening
No
RoHS
Compliant
Schedule B
8541210080
Transition Frequency
300 MHz
Voltage Rating (DC)
160 V
Related Parts