Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
EEEFC1V470P
Product Attributes
TYPE
DESCRIPTION
Capacitance
47 µF
Case/Package
Radial
Contact Plating
Tin
Diameter
8 mm
Dielectric Material
Aluminium
Dissipation Factor
12 %
ESR (Equivalent Series Resistance)
400 mΩ
Height
6.2 mm
Height - Seated (Max)
6.1976 mm
Impedance
400 mΩ
Lead Free
Lead Free
Lead Length
3.4 mm
Lead Pitch
2.2 mm
Leakage Current
3 µA
Length
6.5 mm
Life (Hours)
1000 hours
Lifecycle Status
Production (Last Updated: 2 years ago)
Material
Aluminium
Max Operating Temperature
105 °C
Min Operating Temperature
-40 °C
Mount
PCB, Surface Mount
Number of Pins
2
Packaging
Cut Tape
Polarity
Polar
Radiation Hardening
No
REACH SVHC
No SVHC
Ripple Current
230 mA
Ripple Current (AC)
230 mA
RoHS
Compliant
Schedule B
8532220020
Termination
SMD/SMT
Tolerance
20 %
Voltage
35 V
Voltage Rating
35 V
Voltage Rating (AC)
35 V
Voltage Rating (DC)
35 V
Width
8.3 mm
Similar Products