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CSD19537Q3
100-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Copper, Tin
Continuous Drain Current (ID)
9.7 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
12.1 mΩ
Drain to Source Voltage (Vdss)
100 V
Fall Time
3 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.1 mm
Input Capacitance
1.68 nF
Lead Free
Contains Lead
Length
3.3 mm
Lifecycle Status
Production (Last Updated: 6 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.8 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Pins
8
Power Dissipation
2.8 W
Rds On Max
14.5 mΩ
Rise Time
3 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
1 mm
Threshold Voltage
3 V
Turn-Off Delay Time
10 ns
Turn-On Delay Time
5 ns
Width
3.3 mm
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