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CSD19536KCS
100-V, N channel NexFET™ power MOSFET, single TO-220, 2.7 mOhm 3-TO-220 -55 to 175
Product Attributes
TYPE
DESCRIPTION
Case/Package
TO-220
Contact Plating
Tin
Continuous Drain Current (ID)
150 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
2.3 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
5 ns
Gate to Source Voltage (Vgs)
20 V
Height
4.7 mm
Input Capacitance
12 nF
Lead Free
Lead Free
Length
10.16 mm
Lifecycle Status
Production (Last Updated: 5 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
375 W
Min Operating Temperature
-55 °C
Mount
Through Hole
Number of Channels
1
Number of Pins
3
Power Dissipation
375 W
Rds On Max
2.7 mΩ
REACH SVHC
No SVHC
Rise Time
8 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
4.58 mm
Threshold Voltage
2.5 V
Turn-Off Delay Time
38 ns
Turn-On Delay Time
14 ns
Weight
6.000006 g
Width
8.7 mm
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