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CSD19534Q5A
100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 15.1 mOhm 8-VSONP -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Tin
Continuous Drain Current (ID)
10 A
Drain to Source Breakdown Voltage
100 V
Drain to Source Resistance
12.6 mΩ
Drain to Source Voltage (Vdss)
100 V
Element Configuration
Single
Fall Time
6 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.1 mm
Input Capacitance
1.68 nF
Lead Free
Contains Lead
Length
4.9 mm
Lifecycle Status
Production (Last Updated: 1 week ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.2 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Pins
8
Packaging
Tape & Reel (TR)
Power Dissipation
3.2 W
Rds On Max
15.1 mΩ
Rise Time
14 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
1 mm
Turn-Off Delay Time
20 ns
Turn-On Delay Time
9 ns
Width
6 mm
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