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CSD18509Q5BT
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 1.2 mOhm 8-VSON-CLIP -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Gold
Continuous Drain Current (ID)
38 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
1 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Fall Time
11 ns
Gate to Source Voltage (Vgs)
20 V
Height
0 m
Input Capacitance
13.9 nF
Lead Free
Contains Lead
Length
5 mm
Lifecycle Status
Production (Last Updated: 2 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
195 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
8
Packaging
Tape & Reel (TR)
Power Dissipation
3.1 W
Rds On Max
1.2 mΩ
REACH SVHC
No SVHC
Rise Time
19 ns
RoHS
Compliant
Thickness
950 µm
Threshold Voltage
1.8 V
Turn-Off Delay Time
57 ns
Turn-On Delay Time
9 ns
Weight
24.012046 mg
Width
5 mm
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