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CSD18503Q5A
40-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 4.3 mOhm 8-VSONP -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Tin
Continuous Drain Current (ID)
19 A
Drain to Source Breakdown Voltage
40 V
Drain to Source Resistance
3.4 mΩ
Drain to Source Voltage (Vdss)
40 V
Element Configuration
Single
Fall Time
2.6 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.1 mm
Input Capacitance
2.64 nF
Length
4.9 mm
Lifecycle Status
Production (Last Updated: 3 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.1 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Pins
8
Packaging
Digi-Reel®
Power Dissipation
3.1 W
Radiation Hardening
No
Rds On Max
4.3 mΩ
REACH SVHC
No SVHC
Rise Time
8.8 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
1 mm
Threshold Voltage
1.8 V
Turn-Off Delay Time
15 ns
Turn-On Delay Time
4.5 ns
Width
6 mm
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