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CSD17578Q3A
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 9.4 mOhm 8-VSONP
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Copper, Tin
Continuous Drain Current (ID)
20 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
6.3 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
1 ns
Gate to Source Voltage (Vgs)
20 V
Height
900 µm
Input Capacitance
1.59 nF
Lead Free
Lead Free
Length
3.3 mm
Lifecycle Status
Production (Last Updated: 6 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 6 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
3.2 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Pins
8
Packaging
Tape & Reel (TR)
Power Dissipation
2.5 W
Rds On Max
7.3 mΩ
Rise Time
6 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
800 µm
Turn-Off Delay Time
13 ns
Turn-On Delay Time
2 ns
Width
3.3 mm
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