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CSD17571Q2
30-V, N channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 29 mOhm 6-WSON -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Tin
Continuous Drain Current (ID)
22 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
24 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
26 ns
Gate to Source Voltage (Vgs)
20 V
Height
800 µm
Input Capacitance
468 pF
Lead Free
Lead Free
Length
2 mm
Lifecycle Status
Production (Last Updated: 4 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
6
Packaging
Tape & Reel (TR)
Power Dissipation
2.5 W
Rds On Max
29 mΩ
Rise Time
19 ns
RoHS
Compliant
Thickness
750 µm
Turn-Off Delay Time
8 ns
Turn-On Delay Time
5.3 ns
Width
2 mm
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