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CSD17304Q3
30-V, N channel NexFET™ power MOSFET, single SON 3 mm x 3 mm, 8.8 mOhm 8-VSON-CLIP -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Tin
Continuous Drain Current (ID)
56 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Resistance
6.9 mΩ
Drain to Source Voltage (Vdss)
30 V
Element Configuration
Single
Fall Time
3.1 ns
Gate to Source Voltage (Vgs)
10 V
Height
1.1 mm
Input Capacitance
955 pF
Lead Free
Contains Lead
Length
3.3 mm
Lifecycle Status
Production (Last Updated: 1 week ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.7 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Nominal Vgs
1.3 V
Number of Channels
1
Number of Elements
1
Number of Pins
8
Packaging
Digi-Reel®
Power Dissipation
2.7 W
Radiation Hardening
No
Rds On Max
7.5 mΩ
REACH SVHC
No SVHC
Rise Time
9.1 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
1 mm
Threshold Voltage
1.3 V
Turn-Off Delay Time
10.4 ns
Turn-On Delay Time
5.1 ns
Width
3.3 mm
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