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CSD13306WT
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm 6-DSBGA -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Copper, Silver, Tin
Continuous Drain Current (ID)
3.5 A
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Single
Fall Time
8 ns
Gate to Source Voltage (Vgs)
10 V
Height
1 mm
Input Capacitance
1.37 nF
Lead Free
Lead Free
Length
1.5 mm
Lifecycle Status
Production (Last Updated: 2 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.9 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Pins
6
Packaging
Tape & Reel (TR)
Power Dissipation
1.9 W
Rds On Max
10.2 mΩ
Rise Time
11 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
2 mm
Threshold Voltage
1 V
Turn-Off Delay Time
20 ns
Turn-On Delay Time
7 ns
Width
1.8 mm
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