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CSD13201W10
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm 4-DSBGA -55 to 150
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Copper, Silver, Tin
Continuous Drain Current (ID)
1.6 A
Drain to Source Breakdown Voltage
12 V
Drain to Source Resistance
26 mΩ
Drain to Source Voltage (Vdss)
12 V
Element Configuration
Single
Fall Time
9.7 ns
Gate to Source Voltage (Vgs)
8 V
Height
625 µm
Input Capacitance
462 pF
Lead Free
Lead Free
Length
0 m
Lifecycle Status
Production (Last Updated: 5 days ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
1.2 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
4
Packaging
Tape & Reel (TR)
Power Dissipation
1.2 W
Rds On Max
34 mΩ
Rise Time
5.9 ns
RoHS
Compliant
Schedule B
8541290080
Thickness
650 µm
Turn-Off Delay Time
14.4 ns
Turn-On Delay Time
3.9 ns
Width
0 m
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