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868242046
Product Attributes
TYPE
DESCRIPTION
Collector Emitter Breakdown Voltage
35 V
Collector Emitter Voltage (VCEO)
35 V
Contact Plating
Copper, Tin
Fall Time
150 µs
Forward Current
50 mA
Forward Voltage
1.2 V
Height
4.8 mm
Input Current
20 mA
Lead Free
Lead Free
Length
5.5 mm
Max Collector Current
20 mA
Max Operating Temperature
85 °C
Max Power Dissipation
100 mW
Min Operating Temperature
-25 °C
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Number of Pins
4
Output Configuration
Phototransistor
Output Current
20 mA
Output Type
Phototransistor
Output Voltage
35 V
Power Dissipation
100 mW
Radiation Hardening
No
REACH SVHC
Unknown
Response Time
50 µs
Reverse Breakdown Voltage
6 V
Reverse Voltage (DC)
6 V
Rise Time
150 µs
RoHS
Compliant
Sensing Distance
2.9972 mm
Wavelength
950 nm
Width
2.6 mm
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