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GP2S60
Product Attributes
TYPE
DESCRIPTION
Case/Package
SMD/SMT
Collector Emitter Breakdown Voltage
35 V
Collector Emitter Voltage (VCEO)
35 V
Contact Plating
Gold
Fall Time
20 µs
Forward Current
50 mA
Forward Voltage
1.2 V
Height
1.1 mm
Input Current
20 mA
Lead Free
Lead Free
Length
3.2 mm
Max Breakdown Voltage
35 V
Max Collector Current
20 mA
Max Operating Temperature
85 °C
Min Operating Temperature
-25 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
4
Output Current
20 mA
Output Type
Phototransistor
Output Voltage
35 V
Packaging
Cut Tape
Power Dissipation
100 mW
Radiation Hardening
No
REACH SVHC
Unknown
Response Time
20 µs
Reverse Breakdown Voltage
6 V
Reverse Voltage (DC)
6 V
Rise Time
20 µs
RoHS
Compliant
Sensing Distance
500 µm
Wavelength
930 nm
Width
1.7 mm
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