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62AC6978
Igbt, Single, 650V, 80A, To-263; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):1.35V; Power Dissipation Pd:270W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-263; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IGB50N65S5ATMA1
Product Attributes
TYPE
DESCRIPTION
Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.35 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
80 A
Height
4.5 mm
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-40 °C
Package Quantity
1000
Packaging
Tape & Reel
Power Dissipation
270 W
RoHS
Non-Compliant
Turn-Off Delay Time
139 ns
Turn-On Delay Time
20 ns
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