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TBSO080P03S
P-MOSFET 14.9A 30V 2.5W 0.08&ohm
Product Attributes
TYPE
DESCRIPTION
Case/Package
SOIC
Continuous Drain Current (ID)
12.6 A
Current Rating
-12.6 A
Drain to Source Breakdown Voltage
30 V
Drain to Source Voltage (Vdss)
30 V
Fall Time
22 ns
Gate to Source Voltage (Vgs)
25 V
Input Capacitance
5.89 nF
Lead Free
Contains Lead
Max Operating Temperature
150 °C
Max Power Dissipation
1.79 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Pins
8
Packaging
Tape & Reel
Power Dissipation
1.79 W
Radiation Hardening
No
Rds On Max
8 mΩ
Rise Time
22 ns
RoHS
Non-Compliant
Turn-Off Delay Time
130 ns
Turn-On Delay Time
15 ns
Voltage Rating (DC)
-30 V
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