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IRF7416PBF
Transistor: P-MOSFET; unipolar; -30V; -10A; 0.02ohm; 2.5W; -55+150 deg.C; SMD; SO8
Product Attributes
TYPE
DESCRIPTION
Case/Package
SOIC
Contact Plating
Tin
Continuous Drain Current (ID)
-10 A
Current Rating
-10 A
Drain to Source Breakdown Voltage
-30 V
Drain to Source Resistance
20 mΩ
Drain to Source Voltage (Vdss)
-30 V
Dual Supply Voltage
-30 V
Element Configuration
Single
Fall Time
60 ns
Gate to Source Voltage (Vgs)
20 V
Height
1.4986 mm
Input Capacitance
1.7 nF
Lead Free
Lead Free
Length
4.9784 mm
Lifecycle Status
Obsolete (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
2.5 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Nominal Vgs
-1 V
Number of Channels
1
Number of Elements
1
Number of Pins
8
On-State Resistance
20 mΩ
Package Quantity
3800
Packaging
Bulk
Power Dissipation
2.5 W
Radiation Hardening
No
Rds On Max
20 mΩ
REACH SVHC
No SVHC
Recovery Time
85 ns
Resistance
20 mΩ
Rise Time
49 ns
RoHS
Compliant
Row Spacing
6.3 mm
Threshold Voltage
-1 V
Turn-Off Delay Time
59 ns
Turn-On Delay Time
18 ns
Voltage Rating (DC)
-30 V
Width
3.9878 mm
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