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BSC014N06NS
Transistor: N-MOSFET; unipolar; 60V; 100A; 0.00145ohm; 156W; -55+150 deg.C; SMD; TDSON8
Product Attributes
TYPE
DESCRIPTION
Contact Plating
Tin
Continuous Drain Current (ID)
100 A
Drain to Source Breakdown Voltage
60 V
Drain to Source Resistance
1.45 mΩ
Drain to Source Voltage (Vdss)
60 V
Fall Time
11 ns
Gate to Source Voltage (Vgs)
20 V
Halogen Free
Halogen Free
Height
1.1 mm
Input Capacitance
6.5 nF
Lead Free
Contains Lead
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Dual Supply Voltage
60 V
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
156 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Number of Pins
8
On-State Resistance
1.45 mΩ
Package Quantity
5000
Packaging
Tape & Reel
Power Dissipation
156 W
Rise Time
10 ns
RoHS
Compliant
Schedule B
8541290080
Threshold Voltage
2.8 V
Turn-Off Delay Time
43 ns
Turn-On Delay Time
23 ns
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