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STMicroelectronics 2308479

2308479

MOSFET N-Channel 800V 300mA (Tc) 3W (Tc) Through Hole TO-92-3

Product Attributes
TYPE
DESCRIPTION
Case/Package
TO-92
Continuous Drain Current (ID)
300 mA
Drain to Source Breakdown Voltage
800 V
Drain to Source Resistance
16 Ω
Drain to Source Voltage (Vdss)
800 V
Element Configuration
Single
Fall Time
55 ns
Gate to Source Voltage (Vgs)
30 V
Input Capacitance
160 pF
Lead Free
Lead Free
Max Operating Temperature
150 °C
Max Power Dissipation
3 W
Min Operating Temperature
-55 °C
Mount
Surface Mount, Through Hole
Nominal Vgs
3.75 V
Number of Elements
1
Number of Pins
3
Packaging
Tape and Reel
Power Dissipation
3 W
Radiation Hardening
No
Rds On Max
16 Ω
REACH SVHC
No SVHC
Resistance
16 Ω
Rise Time
30 ns
RoHS
Compliant
Schedule B
8541290080
Threshold Voltage
3.75 V
Turn-Off Delay Time
22 ns
Turn-On Delay Time
8 ns
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