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EE-SX1106
Product Attributes
TYPE
DESCRIPTION
Ambient Temperature Range High
85 °C
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage (VCEO)
30 V
Fall Time
10 µs
Forward Current
50 mA
Forward Voltage
1.3 V
Height
5.4 mm
Input Current
50 mA
Lead Free
Lead Free
Length
6.4 mm
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Collector Current
30 mA
Max Input Current
50 mA
Max Operating Temperature
85 °C
Max Output Current
30 mA
Min Operating Temperature
-25 °C
Mount
PCB, Through Hole
Number of Channels
1
Number of Elements
1
Number of Pins
4
Output Configuration
Phototransistor
Output Voltage
30 V
Packaging
Bulk
Peak Wavelength
950 nm
Power Dissipation
80 mW
Radiation Hardening
No
REACH SVHC
Unknown
Response Time
10 µs
Reverse Breakdown Voltage
5 V
Reverse Voltage (DC)
5 V
Rise Time
10 µs
RoHS
Compliant
Schedule B
8541408000
Sensing Distance
2.9972 mm
Termination
Solder
Wavelength
950 nm
Width
4.2 mm
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