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IF-QRD11140
Product Attributes
TYPE
DESCRIPTION
Collector Emitter Breakdown Voltage
30 V
Collector Emitter Voltage (VCEO)
30 V
Contact Plating
Tin
Fall Time
50 µs
Forward Current
50 mA
Forward Voltage
1.7 V
Height
4.65 mm
Input Current
20 mA
Lead Free
Lead Free
Length
6.1 mm
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Max Collector Current
1 mA
Max Operating Temperature
85 °C
Max Power Dissipation
100 mW
Min Operating Temperature
-40 °C
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Number of Pins
4
Operating Supply Voltage
1.7 V
Output Type
Phototransistor
Output Voltage
30 V
Packaging
Bulk
Power Dissipation
100 mW
Radiation Hardening
No
REACH SVHC
No SVHC
Response Time
50 µs
Reverse Breakdown Voltage
5 V
Reverse Voltage (DC)
5 V
Rise Time
10 µs
RoHS
Compliant
Schedule B
8541408000
Sensing Distance
1.27 mm
Wavelength
940 nm
Weight
0 g
Width
4.39 mm
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