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Infineon IPAN65R650CE

IPAN65R650CE

Product Attributes
TYPE
DESCRIPTION
Case/Package
TO-220-3
Continuous Drain Current (ID)
10.1 A
Drain to Source Breakdown Voltage
650 V
Drain to Source Resistance
540 mΩ
Drain to Source Voltage (Vdss)
650 V
Gate to Source Voltage (Vgs)
20 V
Height
18.01 mm
Input Capacitance
440 pF
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
150 °C
Max Operating Temperature
150 °C
Max Power Dissipation
28 W
Min Operating Temperature
-40 °C
Mount
Through Hole
Number of Channels
1
On-State Resistance
650 mΩ
Package Quantity
500
Power Dissipation
28 W
Rds On Max
650 mΩ
RoHS
Compliant
Schedule B
8541290080
Turn-Off Delay Time
64 ns
Turn-On Delay Time
10 ns
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