Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
110029143
Product Attributes
TYPE
DESCRIPTION
Case/Package
DPAK
Contact Plating
Tin
Continuous Drain Current (ID)
-31 A
Current Rating
-31 A
Drain to Source Breakdown Voltage
-55 V
Drain to Source Resistance
65 mΩ
Drain to Source Voltage (Vdss)
-55 V
Dual Supply Voltage
-55 V
Element Configuration
Single
Fall Time
63 ns
Gate to Source Voltage (Vgs)
20 V
Height
2.39 mm
Input Capacitance
1.2 nF
Lead Free
Lead Free
Length
6.73 mm
Lifecycle Status
Obsolete (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Max Power Dissipation
110 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Nominal Vgs
-4 V
Number of Channels
1
Number of Elements
1
Number of Pins
3
On-State Resistance
65 mΩ
Package Quantity
3000
Power Dissipation
89 W
Radiation Hardening
No
Rds On Max
65 mΩ
REACH SVHC
No SVHC
Recovery Time
110 ns
Rise Time
66 ns
RoHS
Compliant
Termination
SMD/SMT
Threshold Voltage
-4 V
Turn-Off Delay Time
39 ns
Turn-On Delay Time
14 ns
Voltage Rating (DC)
-55 V
Width
6.22 mm
Similar Products