Products
Distributors
Manufacturers
- Intel
- Samsung
- Texas Instruments
- STMicroelectronics
- Infineon
- NXP Semiconductors
- Microchip
- Analog Devices
- onsemi
- Skyworks Solutions
- Avago
- Marvell
- Omnivision Technologies
- ROHM
- Seoul Semiconductor
- Silego
- Cirrus Logic
- Silicon Labs
- Lattice Semiconductor
- Cypress Semiconductor
- Toshiba
- Mitsubishi
- Panasonic
- Sharp
- Omnetics
- Laird
- TDK-Lambda
- WAGO
- All Distributors
110019883
Product Attributes
TYPE
DESCRIPTION
Breakdown Voltage
13.3 V
Capacitance
75 pF
Case/Package
SOT-23
Clamping Voltage
26 V
Composition
Zener
Contact Plating
Tin
Depth
1.4 mm
Direction
Bidirectional
Element Configuration
Dual
ESD Protection
Yes
Height
1.11 mm
Leakage Current
20 µA
Length
3.04 mm
Max Breakdown Voltage
13.3 V
Max Operating Temperature
150 °C
Max Power Dissipation
600 W
Max Reverse Leakage Current
20 µA
Max Surge Current
30 A
Min Breakdown Voltage
13.3 V
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Bidirectional Channels
2
Number of Channels
2
Number of Elements
2
Number of Pins
3
Packaging
Cut Tape
Peak Pulse Current
17 A
Peak Pulse Power
400 W
Polarity
Bidirectional, Unidirectional
Power Dissipation
400 W
Power Line Protection
No
Radiation Hardening
No
REACH SVHC
No SVHC
Reverse Breakdown Voltage
13.3 V
Reverse Standoff Voltage
12 V
RoHS
Compliant
Schedule B
8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|8536300000|85
Termination
SMD/SMT
Test Current
1 mA
Width
1.397 mm
Working Voltage
12 V
Similar Products