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MOCD207M
Product Attributes
TYPE
DESCRIPTION
Ambient Temperature Range High
100 °C
Approvals
UL
Case/Package
SOIC
Collector Emitter Breakdown Voltage
70 V
Collector Emitter Saturation Voltage
400 mV
Collector Emitter Voltage (VCEO)
70 V
Contact Plating
Tin
Current Transfer Ratio
200 %
Forward Current
60 mA
Forward Voltage
1.25 V
Height
3.43 mm
Input Current
30 mA
Isolation Voltage
2.5 kV
Lead Free
Lead Free
Length
5.13 mm
Lifecycle Status
Production (Last Updated: 2 years ago)
Manufacturer Lifecycle Status
ACTIVE (Last Updated: 2 years ago)
Max Collector Current
150 mA
Max Input Current
60 mA
Max Junction Temperature (Tj)
125 °C
Max Operating Temperature
100 °C
Max Output Voltage
70 V
Max Power Dissipation
250 mW
Min Operating Temperature
-40 °C
Mount
Surface Mount
Number of Channels
2
Number of Circuits
2
Number of Elements
2
Number of Pins
8
Output Current per Channel
150 mA
Output Voltage
70 V
Packaging
Box
Power Dissipation
240 mW
Radiation Hardening
No
REACH SVHC
No SVHC
Reverse Breakdown Voltage
6 V
Reverse Voltage (DC)
6 V
Rise Time
3 µs
RoHS
Compliant
Schedule B
8541408000
Test Voltage
3 kV
Turn-Off Delay Time
5.7 µs
Turn-On Delay Time
7.5 µs
Voltage
6 V
Weight
251.998911 mg
Width
4.16 mm
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