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SI5517DU-T1-GE3
Product Attributes
TYPE
DESCRIPTION
Continuous Drain Current (ID)
6 A
Drain to Source Breakdown Voltage
20 V
Drain to Source Resistance
60 mΩ
Drain to Source Voltage (Vdss)
20 V
Fall Time
55 ns
Gate to Source Voltage (Vgs)
8 V
Height
750 µm
Input Capacitance
520 pF
Length
3 mm
Max Operating Temperature
150 °C
Max Power Dissipation
8.3 W
Min Operating Temperature
-55 °C
Mount
Surface Mount
Number of Channels
2
Number of Elements
2
Number of Pins
8
Power Dissipation
2.3 W
Radiation Hardening
No
Rds On Max
39 mΩ
Rise Time
35 ns
RoHS
Compliant
Schedule B
8541290080
Turn-Off Delay Time
40 ns
Turn-On Delay Time
8 ns
Width
1.9 mm
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