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TCST2300
Product Attributes
TYPE
DESCRIPTION
Collector Emitter Breakdown Voltage
70 V
Collector Emitter Voltage (VCEO)
70 V
Contact Plating
Silver, Tin
Current Transfer Ratio
2.5 %
Fall Time
8 µs
Forward Current
60 mA
Forward Voltage
1.25 V
Height
11.1 mm
Input Current
60 mA
Lead Free
Lead Free
Length
24.5 mm
Max Breakdown Voltage
70 V
Max Collector Current
100 mA
Max Operating Temperature
85 °C
Max Power Dissipation
250 mW
Min Operating Temperature
-55 °C
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Number of Pins
4
Output Configuration
Phototransistor
Output Type
Phototransistor
Output Voltage
70 V
Power Dissipation
250 mW
Radiation Hardening
No
REACH SVHC
No SVHC
Response Time
8 µs
Reverse Breakdown Voltage
6 V
Reverse Voltage (DC)
6 V
Rise Time
10 µs
RoHS
Compliant
Sensing Distance
3.0988 mm
Voltage Rating (DC)
1.25 V
Wavelength
950 nm
Width
6.3 mm
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