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DG211BDY-E3
Product Attributes
TYPE
DESCRIPTION
Case/Package
SOIC N
Contact Plating
Tin
Drain to Source Resistance
85 Ω
Height
1.55 mm
High Level Output Current
100 mA
Lead Free
Lead Free
Length
10 mm
Max Dual Supply Voltage
22 V
Max Operating Temperature
85 °C
Max Power Dissipation
640 mW
Max Supply Current
10 µA
Max Supply Voltage
22 V
Min Dual Supply Voltage
4.5 V
Min Operating Temperature
-40 °C
Min Supply Voltage
4.5 V
Mount
Surface Mount
Nominal Supply Current
50 µA
Number of Channels
4
Number of Circuits
4
Number of Inputs
4
Number of Outputs
4
Number of Pins
16
On-State Resistance
45 Ω
Operating Supply Current
10 µA
Polarity
Non-Inverting
Power Dissipation
640 mW
Radiation Hardening
No
REACH SVHC
Unknown
Resistance
85 Ω
RoHS
Compliant
Schedule B
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Supply Type
Dual, Single
Throw Configuration
SPST
Turn-Off Delay Time
200 ns
Turn-On Delay Time
300 ns
Voltage
44 V
Weight
547.485991 mg
Width
4 mm
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