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Infineon IGB50N65S5ATMA1CT-ND

IGB50N65S5ATMA1CT-ND

Product Attributes
TYPE
DESCRIPTION
Collector Emitter Breakdown Voltage
650 V
Collector Emitter Saturation Voltage
1.35 V
Collector Emitter Voltage (VCEO)
650 V
Continuous Collector Current
80 A
Height
4.5 mm
Lifecycle Status
Production (Last Updated: 3 years ago)
Max Junction Temperature (Tj)
175 °C
Max Operating Temperature
175 °C
Min Operating Temperature
-40 °C
Package Quantity
1000
Packaging
Tape & Reel
Power Dissipation
270 W
RoHS
Non-Compliant
Turn-Off Delay Time
139 ns
Turn-On Delay Time
20 ns
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